Справочник MOSFET. AP70T03GJ

 

AP70T03GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP70T03GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 53 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 105 ns
   Cossⓘ - Выходная емкость: 245 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP70T03GJ

 

 

AP70T03GJ Datasheet (PDF)

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 ap70t03gj.pdf

AP70T03GJ AP70T03GJ

AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAP70T03 series are from Advanced Power innovated design and siliconGDS TO-252(H)process technology to achieve the lowest possible on-

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 ap70t03gh-hf ap70t03gj-hf.pdf

AP70T03GJ AP70T03GJ

AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device des

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AP70T03GJ AP70T03GJ

AP70T03GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAP70T03 series are from Advanced Power innovated designand silicon process technology to achieve the lowest pos

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 ap70t03gi.pdf

AP70T03GJ AP70T03GJ

AP70T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance

 6.2. Size:98K  ape
 ap70t03gh.pdf

AP70T03GJ AP70T03GJ

AP70T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device design, low on-resistanc

 6.3. Size:98K  ape
 ap70t03gp ap70t03gs.pdf

AP70T03GJ AP70T03GJ

AP70T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching Speed ID 60AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-263(S)designer with the best combination of fast switching,ruggedized device design, low on-re

 6.4. Size:843K  cn vbsemi
 ap70t03gh.pdf

AP70T03GJ AP70T03GJ

AP70T03GHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

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