AP16N50I Todos los transistores

 

AP16N50I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP16N50I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de AP16N50I MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP16N50I Datasheet (PDF)

 ..1. Size:171K  ape
 ap16n50i.pdf pdf_icon

AP16N50I

AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID3 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 0.1. Size:58K  ape
 ap16n50i-hf.pdf pdf_icon

AP16N50I

AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 7.1. Size:151K  ape
 ap16n50p.pdf pdf_icon

AP16N50I

AP16N50P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated

 7.2. Size:59K  ape
 ap16n50w-hf.pdf pdf_icon

AP16N50I

AP16N50W-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

MOSTRAR MÁS

Otros transistores... AP3P9R0JB , AP3P9R0P , AP6679BGH , AP6679BGJ , AP6679BGJB , AP9561GJ , AP70T03GJ , AP70T03GJB , IRFB31N20D , AP0904GH , AP0904GJB , AP75T10GI , AP60T03GH , AP01N60J , AP9563GH , AP9563GJ , AP9971GP .

History: CS4N60FA9TDY | UT2305A | WML50P04TS | SSW80R240SFD | MSJAC11N65Y | AUIRF4905 | MSF7N80

 

 
Back to Top

 


 
.