Справочник MOSFET. AP16N50I

 

AP16N50I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP16N50I
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 52 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 16 A
   Общий заряд затвора (Qg): 33 nC
   Время нарастания (tr): 50 ns
   Выходная емкость (Cd): 630 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP16N50I

 

 

AP16N50I Datasheet (PDF)

 ..1. Size:171K  ape
ap16n50i.pdf

AP16N50I
AP16N50I

AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID3 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 0.1. Size:58K  ape
ap16n50i-hf.pdf

AP16N50I
AP16N50I

AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 7.1. Size:151K  ape
ap16n50p.pdf

AP16N50I
AP16N50I

AP16N50P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated

 7.2. Size:59K  ape
ap16n50w-hf.pdf

AP16N50I
AP16N50I

AP16N50W-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 7.3. Size:59K  ape
ap16n50p-hf.pdf

AP16N50I
AP16N50I

AP16N50P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 7.4. Size:58K  ape
ap16n50w.pdf

AP16N50I
AP16N50I

AP16N50WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resistance a

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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