AP9987GJV Todos los transistores

 

AP9987GJV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9987GJV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: TO251VS

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AP9987GJV Datasheet (PDF)

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ap9987gjv.pdf

AP9987GJV
AP9987GJV

AP9987GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible o

 6.1. Size:198K  ape
ap9987gj.pdf

AP9987GJV
AP9987GJV

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe

 6.2. Size:97K  ape
ap9987gh-hf ap9987gj-hf.pdf

AP9987GJV
AP9987GJV

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe

 6.3. Size:831K  cn vbsemi
ap9987gj.pdf

AP9987GJV
AP9987GJV

AP9987GJwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

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