AP04N70BI-H Todos los transistores

 

AP04N70BI-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP04N70BI-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.3 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO220F

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AP04N70BI-H datasheet

 ..1. Size:224K  ape
 ap04n70bi-h.pdf pdf_icon

AP04N70BI-H

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l

 0.1. Size:70K  ape
 ap04n70bi-hf.pdf pdf_icon

AP04N70BI-H

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 0.2. Size:108K  ape
 ap04n70bi-h-hf.pdf pdf_icon

AP04N70BI-H

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D

 4.1. Size:105K  ape
 ap04n70bi-a.pdf pdf_icon

AP04N70BI-H

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan

MOSTRAR MÁS

Otros transistores... AP20N15GI , AP9567GH , AP9987GH , AP9987GJ , AP9987GJV , AP9997AGH , AP4407I , AP02N40H , EMB04N03H , AP2762IN-A , AP3990I , AP40P03GI , AP9971GI , AP9972GI , AP01L60H , AP01L60J , AP03N70I .

History: CJQ07N10 | CJMPD11 | LSC65R280HT

 

 

 

 

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