Справочник MOSFET. AP04N70BI-H

 

AP04N70BI-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP04N70BI-H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   trⓘ - Время нарастания: 8.3 ns
   Cossⓘ - Выходная емкость: 65 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP04N70BI-H

 

 

AP04N70BI-H Datasheet (PDF)

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 ap04n70bi-h.pdf

AP04N70BI-H AP04N70BI-H

AP04N70BI-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4AG RoHS Compliant & Halogen-FreeSDescriptionAP04N70B series are from Advanced Power innovated design andsilicon process technology to achieve the l

 0.1. Size:70K  ape
 ap04n70bi-hf.pdf

AP04N70BI-H AP04N70BI-H

AP04N70BI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 0.2. Size:108K  ape
 ap04n70bi-h-hf.pdf

AP04N70BI-H AP04N70BI-H

AP04N70BI-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GD

 4.1. Size:105K  ape
 ap04n70bi-a.pdf

AP04N70BI-H AP04N70BI-H

AP04N70BI-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan

 4.2. Size:71K  ape
 ap04n70bi-a-hf.pdf

AP04N70BI-H AP04N70BI-H

AP04N70BI-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

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