AP9972GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9972GI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AP9972GI MOSFET
- Selecciónⓘ de transistores por parámetros
AP9972GI datasheet
ap9972gi.pdf
AP9972GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design
ap9972gi-hf.pdf
AP9972GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m Lower On-resistance ID 35A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D S ruggedized dev
ap9972gs.pdf
AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th
ap9972gp.pdf
AP9972GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60A G S Description AP9972 series are from Advanced Power innovated design and silicon process technology to achieve th
Otros transistores... AP9997AGH , AP4407I , AP02N40H , AP04N70BI-H , AP2762IN-A , AP3990I , AP40P03GI , AP9971GI , 60N06 , AP01L60H , AP01L60J , AP03N70I , AP9578GH , AP9870GH , AP9962AGP , AP9973GH , AP9973GJ .
History: SGSP462 | SI2101 | AP15N03GH | AP3N4R5M
History: SGSP462 | SI2101 | AP15N03GH | AP3N4R5M
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