AP9973GH Todos los transistores

 

AP9973GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9973GH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO252

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AP9973GH datasheet

 ..1. Size:235K  ape
ap9973gh.pdf pdf_icon

AP9973GH

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

 0.1. Size:98K  ape
ap9973gh-hf ap9973gj-hf.pdf pdf_icon

AP9973GH

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H)

 7.1. Size:60K  ape
ap9973gd.pdf pdf_icon

AP9973GH

AP9973GD Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 80m D1 PDIP-8 Package ID 3.9A RoHS Compliant G2 S2 PDIP-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

 7.2. Size:62K  ape
ap9973gp ap9973gs.pdf pdf_icon

AP9973GH

AP9973GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low o

Otros transistores... AP9971GI , AP9972GI , AP01L60H , AP01L60J , AP03N70I , AP9578GH , AP9870GH , AP9962AGP , IRF840 , AP9973GJ , AP15N03GH , AP03N90I , AP3310GH , AP6679BMT , AP02N60I-A , AP9977GJV , AP20T03GH .

History: FTK830P | AP16N50W-HF | AP9561GJ | AP9936GM | AP2308GEN

 

 

 


History: FTK830P | AP16N50W-HF | AP9561GJ | AP9936GM | AP2308GEN

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