AP9973GJ Todos los transistores

 

AP9973GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9973GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO251

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AP9973GJ datasheet

 ..1. Size:199K  ape
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AP9973GJ

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

 ..2. Size:822K  cn vbsemi
ap9973gj.pdf pdf_icon

AP9973GJ

AP9973GJ www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar

 0.1. Size:98K  ape
ap9973gh-hf ap9973gj-hf.pdf pdf_icon

AP9973GJ

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H)

 7.1. Size:60K  ape
ap9973gd.pdf pdf_icon

AP9973GJ

AP9973GD Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 80m D1 PDIP-8 Package ID 3.9A RoHS Compliant G2 S2 PDIP-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

Otros transistores... AP9972GI , AP01L60H , AP01L60J , AP03N70I , AP9578GH , AP9870GH , AP9962AGP , AP9973GH , 20N60 , AP15N03GH , AP03N90I , AP3310GH , AP6679BMT , AP02N60I-A , AP9977GJV , AP20T03GH , AP20T03GJ .

 

 

 


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