AP20T03GJ Todos los transistores

 

AP20T03GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP20T03GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO251
 

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AP20T03GJ Datasheet (PDF)

 ..1. Size:202K  ape
 ap20t03gj.pdf pdf_icon

AP20T03GJ

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-

 6.1. Size:92K  ape
 ap20t03ghj-hf.pdf pdf_icon

AP20T03GJ

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and

 6.2. Size:122K  ape
 ap20t03gt-hf.pdf pdf_icon

AP20T03GJ

AP20T03GT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,

 6.3. Size:238K  ape
 ap20t03gh.pdf pdf_icon

AP20T03GJ

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-

MOSTRAR MÁS

Otros transistores... AP9973GJ , AP15N03GH , AP03N90I , AP3310GH , AP6679BMT , AP02N60I-A , AP9977GJV , AP20T03GH , IRLZ44N , AP4578GH , AP4430GM , AP9420GM , AP9408GM , AP0403GM , AP0603GM , AP0903GM , AP10TN030M .

History: RU7N65L | JMSH0803MC

 

 
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History: RU7N65L | JMSH0803MC

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