AP20T03GJ Todos los transistores

 

AP20T03GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP20T03GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO251

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AP20T03GJ datasheet

 ..1. Size:202K  ape
 ap20t03gj.pdf pdf_icon

AP20T03GJ

AP20T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5A G RoHS Compliant S Description AP20T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-

 6.1. Size:92K  ape
 ap20t03ghj-hf.pdf pdf_icon

AP20T03GJ

AP20T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5A G RoHS Compliant S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and

 6.2. Size:122K  ape
 ap20t03gt-hf.pdf pdf_icon

AP20T03GJ

AP20T03GT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 3.2A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance,

 6.3. Size:238K  ape
 ap20t03gh.pdf pdf_icon

AP20T03GJ

AP20T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5A G RoHS Compliant S Description AP20T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-

MOSTRAR MÁS

Otros transistores... AP9973GJ , AP15N03GH , AP03N90I , AP3310GH , AP6679BMT , AP02N60I-A , AP9977GJV , AP20T03GH , IRLZ44N , AP4578GH , AP4430GM , AP9420GM , AP9408GM , AP0403GM , AP0603GM , AP0903GM , AP10TN030M .

 

 

 


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