AP20T03GJ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP20T03GJ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 12.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
Qgⓘ - Общий заряд затвора: 4 nC
trⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO251
AP20T03GJ Datasheet (PDF)
ap20t03gj.pdf

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
ap20t03ghj-hf.pdf

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and
ap20t03gt-hf.pdf

AP20T03GT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 3.2AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,
ap20t03gh.pdf

AP20T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID 12.5AG RoHS CompliantSDescriptionAP20T03 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IPD053N08N3G | STB155N3H6 | FDS6688AS | PD551BA
History: IPD053N08N3G | STB155N3H6 | FDS6688AS | PD551BA



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