AP4430GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4430GM 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 35 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 420 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Encapsulados: SO8
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AP4430GM datasheet
..1. Size:167K ape
ap4430gm.pdf 
AP4430GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 4.6m D Fast Switching Characteristic ID 20A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4430 series are
0.1. Size:93K ape
ap4430gm-hf.pdf
AP4430GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 4.6m D Fast Switching Characteristic ID 20A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination
7.1. Size:249K ape
ap4430gem.pdf
AP4430GEM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Fast Switching Characteristic RDS(ON) 4m D D Low On-resistance ID 20A G S S S SO-8 Description D G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device de
9.1. Size:95K ape
ap4438cgm-hf.pdf
AP4438CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.2. Size:176K ape
ap4434gm.pdf
AP4434GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D D D Capable of 2.5V gate drive RDS(ON) 18.5m D Surface mount package ID 8.3A G S S S SO-8 D Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, S ruggedized devi
9.3. Size:97K ape
ap4439gmt-hf.pdf
AP4439GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D SO-8 Compatible RDS(ON) 10m Lower Gate Charge ID -58A G RoHS Compliant & Halogen-Free S D Description D D AP4439 series are from Advanced Power innovated design and silicon D process technology to achieve the lowest p
9.4. Size:95K ape
ap4433gm-hf.pdf
AP4433GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower Gate Charge RDS(ON) 30m D Fast Switching Characteristic ID -7.4A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.5. Size:93K ape
ap4439gm-hf.pdf
AP4439GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower On-resistance RDS(ON) 10m D Fast Switching Characteristic ID -13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination
9.6. Size:94K ape
ap4438bgm-hf.pdf
AP4438BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 14m D Fast Switching Characteristic ID 10.4A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.7. Size:76K ape
ap4434gh-hf.pdf
AP4434GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Fast Switching Characteristic ID 21A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fast
9.8. Size:116K ape
ap4438gyt.pdf
AP4438GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7A G S D D Description D D AP4438 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-r
9.9. Size:202K ape
ap4435gm-hf.pdf
AP4435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 20m D Fast Switching Characteristic ID -9A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
9.10. Size:177K ape
ap4436gm.pdf
AP4436GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D D D Capable of 2.5V gate drive RDS(ON) 32m D Surface mount package ID 6.4A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, S ruggedized device des
9.11. Size:93K ape
ap4434gm-hf.pdf
AP4434GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Surface Mount Package ID 8.3A G Halogen Free & RoHS Compliant Product S Description D D Advanced Power MOSFETs from APEC provide the D D designer with the best combination of fast switch
9.12. Size:94K ape
ap4432gm.pdf
AP4432GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 15m D RoHS Compliant ID 10A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de
9.13. Size:214K ape
ap4435gh ap4435gj.pdf
AP4435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltag
9.14. Size:100K ape
ap4435gh-hf ap4435gj-hf.pdf
AP4435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,
9.15. Size:57K ape
ap4438agm-hf.pdf
AP4438AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 12.5m D D Fast Switching Characteristic ID 11.2A G RoHS Compliant & Halogen-Free S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.16. Size:76K ape
ap4434agh-hf-pre.pdf
AP4434AGH-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G The Advanced Power MOSFETs from APEC provide the D
9.17. Size:54K ape
ap4435gm.pdf
AP4435GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 20m D Fast Switching Characteristic ID -9A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d
9.18. Size:95K ape
ap4434agm-hf.pdf
AP4434AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D D D Capable of 1.8V Gate Drive RDS(ON) 22m D Fast Switching Characteristic ID 8.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.19. Size:57K ape
ap4433gh-hf.pdf
AP4433GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 30m Fast Switching Characteristic ID -21.5A G RoHS Compliant & Halogen-Free S Description AP4433 series are from Advanced Power innovated design and G silicon process technology to achieve the lo
9.20. Size:59K ape
ap4438gyt-hf.pdf
AP4438GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7A G S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.21. Size:168K ape
ap4438cgm.pdf
AP4438CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP4438C series are fr
9.22. Size:95K ape
ap4435gyt-hf.pdf
AP4435GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device des
9.23. Size:60K ape
ap4434agyt-hf.pdf
AP4434AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8A G D S D D Description D AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on
9.24. Size:59K ape
ap4438gsm-hf.pdf
AP4438GSM-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 11.5m D Fast Switching Performance ID 11.7A G S RoHS Compliant & Halogen-Free S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode designer with the best co
9.25. Size:93K ape
ap4439gh-hf.pdf
AP4439GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D TO-
9.26. Size:122K ape
ap4433gi-hf.pdf
AP4433GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 32m Fast Switching Characteristic ID -21A G RoHS Compliant & Halogen-Free S Description AP4433 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.27. Size:94K ape
ap4438gm-hf.pdf
AP4438GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.28. Size:93K ape
ap4437gm-hf.pdf
AP4437GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower On-resistance RDS(ON) 16m D Fast Switching Characteristic ID -10.4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination
9.32. Size:819K cn vbsemi
ap4435gj.pdf
AP4435GJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.022 at VGS = - 4.5 V - 35 APPLICATIONS TO-251 Load Switch S Battery Switch G D P-Channel MOSFET G D S Top
9.33. Size:2937K cn vbsemi
ap4435gm.pdf
AP4435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D
9.34. Size:1408K cn apm
ap4435b.pdf
AP4435B -30V P-Channel Enhancement Mode MOSFET Description The AP4435B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-9.3A DS D R
9.35. Size:1538K cn apm
ap4435a.pdf
AP4435A -30V P-Channel Enhancement Mode MOSFET Description The AP4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = 9.5A RDS(ON)
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