AP4430GM Todos los transistores

 

AP4430GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4430GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET AP4430GM

 

Principales características: AP4430GM

 ..1. Size:167K  ape
ap4430gm.pdf pdf_icon

AP4430GM

AP4430GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 4.6m D Fast Switching Characteristic ID 20A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4430 series are

 0.1. Size:93K  ape
ap4430gm-hf.pdf pdf_icon

AP4430GM

AP4430GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 4.6m D Fast Switching Characteristic ID 20A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination

 7.1. Size:249K  ape
ap4430gem.pdf pdf_icon

AP4430GM

AP4430GEM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Fast Switching Characteristic RDS(ON) 4m D D Low On-resistance ID 20A G S S S SO-8 Description D G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device de

 9.1. Size:95K  ape
ap4438cgm-hf.pdf pdf_icon

AP4430GM

AP4438CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination o

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History: ZVN3310ASTZ | PSMN6R4-30MLD | ZVNL110ASTOB | MTP4N90 | IPA60R180P7S | PTF8N65 | SIHFS9N60A

 

 
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