AP18P10GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP18P10GM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.7 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP18P10GM MOSFET
- Selecciónⓘ de transistores por parámetros
AP18P10GM datasheet
ap18p10gm.pdf
AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP18P10 series are
ap18p10gm-hf.pdf
AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination
ap18p10gh.pdf
AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r
ap18p10gk.pdf
AP18P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D Simple Drive Requirement RDS(ON) 160m S Fast Switching Characteristic ID -3.1A D RoHS Compliant & Halogen-Free SOT-223 G D Description AP18P10 series are from Advanced Power innovated design and silicon process technology to
Otros transistores... AP0403GM , AP0603GM , AP0903GM , AP10TN030M , AP10TN135M , AP15P15GM , AP15T15GM , AP15TP1R0M , 7N65 , AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , AP3P010M , AP3P028LM , AP3P050M , AP3P7R0EM .
History: AO4407C | 2SK3047 | APM9904K | ME2326A | LSD80R2K8GT
History: AO4407C | 2SK3047 | APM9904K | ME2326A | LSD80R2K8GT
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