AP18P10GM. Аналоги и основные параметры
Наименование производителя: AP18P10GM
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: SO8
Аналог (замена) для AP18P10GM
- подборⓘ MOSFET транзистора по параметрам
AP18P10GM даташит
ap18p10gm.pdf
AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP18P10 series are
ap18p10gm-hf.pdf
AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination
ap18p10gh.pdf
AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r
ap18p10gk.pdf
AP18P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D Simple Drive Requirement RDS(ON) 160m S Fast Switching Characteristic ID -3.1A D RoHS Compliant & Halogen-Free SOT-223 G D Description AP18P10 series are from Advanced Power innovated design and silicon process technology to
Другие MOSFET... AP0403GM , AP0603GM , AP0903GM , AP10TN030M , AP10TN135M , AP15P15GM , AP15T15GM , AP15TP1R0M , 7N65 , AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , AP3P010M , AP3P028LM , AP3P050M , AP3P7R0EM .
History: AP02N40H | LSC60R125HT | APM8005K
History: AP02N40H | LSC60R125HT | APM8005K
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