AP30T10GM Todos los transistores

 

AP30T10GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30T10GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP30T10GM Datasheet (PDF)

 ..1. Size:181K  ape
 ap30t10gm.pdf pdf_icon

AP30T10GM

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

 0.1. Size:58K  ape
 ap30t10gm-hf.pdf pdf_icon

AP30T10GM

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process technol

 6.1. Size:59K  ape
 ap30t10gs-hf.pdf pdf_icon

AP30T10GM

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.2. Size:60K  ape
 ap30t10gk-hf.pdf pdf_icon

AP30T10GM

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IPI65R190CFD | RUH1H139R-A | WM02N45M | FRS240H | FQD10N20CTF | RU8080R | KI2312DS

 

 
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