AP30T10GM - аналоги и даташиты транзистора

 

AP30T10GM - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP30T10GM
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   tr ⓘ - Время нарастания: 6.5 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SO8
 

 Аналог (замена) для AP30T10GM

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP30T10GM Datasheet (PDF)

 ..1. Size:181K  ape
 ap30t10gm.pdf pdf_icon

AP30T10GM

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

 0.1. Size:58K  ape
 ap30t10gm-hf.pdf pdf_icon

AP30T10GM

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process technol

 6.1. Size:59K  ape
 ap30t10gs-hf.pdf pdf_icon

AP30T10GM

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.2. Size:60K  ape
 ap30t10gk-hf.pdf pdf_icon

AP30T10GM

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP0903GM , AP10TN030M , AP10TN135M , AP15P15GM , AP15T15GM , AP15TP1R0M , AP18P10GM , AP20T15GM , 7N65 , AP3N3R3M , AP3N4R5M , AP3P010M , AP3P028LM , AP3P050M , AP3P7R0EM , AP3P9R0M , AP4024EM .

History: HM3401B | L2N60D | NCEAP018N60AGU | BSC059N04LSG | HM4438 | IRF6648 | WFP634

 

 
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