AP3P010M Todos los transistores

 

AP3P010M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P010M
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.3 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 34 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: SO8

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AP3P010M Datasheet (PDF)

 ..1. Size:186K  ape
ap3p010m.pdf

AP3P010M
AP3P010M

AP3P010MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P010 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t

 7.1. Size:137K  ape
ap3p010yt.pdf

AP3P010M
AP3P010M

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

 7.2. Size:162K  ape
ap3p010amt.pdf

AP3P010M
AP3P010M

AP3P010AMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free GSDDescriptionDDAP3P010A series are from Advanced Power innovated design andDsilicon process technology to achiev

 7.3. Size:67K  ape
ap3p010h.pdf

AP3P010M
AP3P010M

AP3P010HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58AG RoHS Compliant & Halogen-FreeSDescriptionGAP3P010 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCI7N60 | FDB120N10

 

 
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History: FCI7N60 | FDB120N10

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