AP3P010M - описание и поиск аналогов

 

AP3P010M. Аналоги и основные параметры

Наименование производителя: AP3P010M

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.3 A

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 500 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: SO8

Аналог (замена) для AP3P010M

- подборⓘ MOSFET транзистора по параметрам

 

AP3P010M даташит

 ..1. Size:186K  ape
ap3p010m.pdfpdf_icon

AP3P010M

AP3P010M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3A G RoHS Compliant & Halogen-Free S Description D D AP3P010 series are from Advanced Power innovated design and silicon D D process technology to achieve t

 7.1. Size:137K  ape
ap3p010yt.pdfpdf_icon

AP3P010M

AP3P010YT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching,

 7.2. Size:162K  ape
ap3p010amt.pdfpdf_icon

AP3P010M

AP3P010AMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free G S D Description D D AP3P010A series are from Advanced Power innovated design and D silicon process technology to achiev

 7.3. Size:67K  ape
ap3p010h.pdfpdf_icon

AP3P010M

AP3P010H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A G RoHS Compliant & Halogen-Free S Description G AP3P010 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes

Другие MOSFET... AP15P15GM , AP15T15GM , AP15TP1R0M , AP18P10GM , AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , 2SK3878 , AP3P028LM , AP3P050M , AP3P7R0EM , AP3P9R0M , AP4024EM , AP4028EM , AP4034GM , AP4407GM .

History: STT3585 | AP9923GEO

 

 

 

 

↑ Back to Top
.