Справочник MOSFET. AP3P010M

 

AP3P010M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP3P010M
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 13.3 A
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 500 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SO8
 

 Аналог (замена) для AP3P010M

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP3P010M Datasheet (PDF)

 ..1. Size:186K  ape
 ap3p010m.pdf pdf_icon

AP3P010M

AP3P010MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P010 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t

 7.1. Size:137K  ape
 ap3p010yt.pdf pdf_icon

AP3P010M

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

 7.2. Size:162K  ape
 ap3p010amt.pdf pdf_icon

AP3P010M

AP3P010AMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free GSDDescriptionDDAP3P010A series are from Advanced Power innovated design andDsilicon process technology to achiev

 7.3. Size:67K  ape
 ap3p010h.pdf pdf_icon

AP3P010M

AP3P010HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58AG RoHS Compliant & Halogen-FreeSDescriptionGAP3P010 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

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Другие MOSFET... AP15P15GM , AP15T15GM , AP15TP1R0M , AP18P10GM , AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , IRFP260 , AP3P028LM , AP3P050M , AP3P7R0EM , AP3P9R0M , AP4024EM , AP4028EM , AP4034GM , AP4407GM .

History: TK10E60W | 2SK2436 | NCE0106R

 

 
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