AP3P9R0M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3P9R0M
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13.5 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP3P9R0M MOSFET
AP3P9R0M Datasheet (PDF)
ap3p9r0m.pdf

AP3P9R0MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower On-resistance RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technolo
ap3p9r0p.pdf

AP3P9R0PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest pos
ap3p9r0i.pdf

AP3P9R0IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss
ap3p9r0h.pdf

AP3P9R0HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowe
Otros transistores... AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , AP3P010M , AP3P028LM , AP3P050M , AP3P7R0EM , IRF4905 , AP4024EM , AP4028EM , AP4034GM , AP4407GM , AP4423GM , AP4426GM , AP4438CGM , AP4453M .
History: RQ1E070RP | SFF80N20MUB | AO4916
History: RQ1E070RP | SFF80N20MUB | AO4916



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
ksa1013 | mje15032g datasheet | 2sc2166 | 2sc5198 | 2sc1971 | tip41c transistor datasheet | 2n3907 | 12n60