AP3P9R0M Todos los transistores

 

AP3P9R0M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P9R0M
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.5 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP3P9R0M Datasheet (PDF)

 ..1. Size:58K  ape
ap3p9r0m.pdf pdf_icon

AP3P9R0M

AP3P9R0MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower On-resistance RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technolo

 7.1. Size:59K  ape
ap3p9r0p.pdf pdf_icon

AP3P9R0M

AP3P9R0PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest pos

 7.2. Size:59K  ape
ap3p9r0i.pdf pdf_icon

AP3P9R0M

AP3P9R0IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss

 7.3. Size:58K  ape
ap3p9r0h.pdf pdf_icon

AP3P9R0M

AP3P9R0HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowe

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK1601 | NTD3055-094-1G | CS15N70F | IRFZ24L | AP18P10GI

 

 
Back to Top

 


 
.