AP3P9R0M. Аналоги и основные параметры
Наименование производителя: AP3P9R0M
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.5 A
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 500 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: SO8
Аналог (замена) для AP3P9R0M
- подборⓘ MOSFET транзистора по параметрам
AP3P9R0M даташит
ap3p9r0m.pdf
AP3P9R0M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower On-resistance RDS(ON) 9m D Fast Switching Characteristic ID -13.5A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP3P9R0 series are from Advanced Power innovated design and silicon process technolo
ap3p9r0p.pdf
AP3P9R0P Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP3P9R0 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
ap3p9r0i.pdf
AP3P9R0I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48A G RoHS Compliant & Halogen-Free S Description AP3P9R0 series are from Advanced Power innovated design and silicon process technology to achieve the lowest poss
ap3p9r0h.pdf
AP3P9R0H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63A G RoHS Compliant & Halogen-Free S Description AP3P9R0 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowe
Другие MOSFET... AP20T15GM , AP30T10GM , AP3N3R3M , AP3N4R5M , AP3P010M , AP3P028LM , AP3P050M , AP3P7R0EM , IRF4905 , AP4024EM , AP4028EM , AP4034GM , AP4407GM , AP4423GM , AP4426GM , AP4438CGM , AP4453M .
History: AP9971GI | STF13N60M2 | STF16N50M2 | STT3490N | AP9926GEO | STT3471P
History: AP9971GI | STF13N60M2 | STF16N50M2 | STT3490N | AP9926GEO | STT3471P
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