AP6N021M Todos los transistores

 

AP6N021M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6N021M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SO8
 

 Búsqueda de reemplazo de AP6N021M MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP6N021M Datasheet (PDF)

 ..1. Size:220K  ape
 ap6n021m.pdf pdf_icon

AP6N021M

AP6N021MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement D RDS(ON) 21mD Fast Switching Characteristic ID3 7.8AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP6N021 series are from Advanced Power innovated design andsilicon process technology to

 8.1. Size:241K  ape
 ap6n023h.pdf pdf_icon

AP6N021M

AP6N023HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 23m Fast Switching Characteristic ID 25.4AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 seriesare from Advanced Power innovated designAP6N023series arefrom Advanced Power innovated

 9.1. Size:178K  ape
 ap6n090k.pdf pdf_icon

AP6N021M

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve

 9.2. Size:171K  ape
 ap6n090g.pdf pdf_icon

AP6N021M

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP4407GM , AP4423GM , AP4426GM , AP4438CGM , AP4453M , AP4800GEM , AP4P018M , AP6679BGM , 4435 , AP6N090M , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , AP9434GM , AP9467AGM , AP9467GM .

History: APT5014BLLG

 

 
Back to Top

 


 
.