Справочник MOSFET. AP6N021M

 

AP6N021M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP6N021M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.8 A
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

AP6N021M Datasheet (PDF)

 ..1. Size:220K  ape
 ap6n021m.pdf pdf_icon

AP6N021M

AP6N021MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement D RDS(ON) 21mD Fast Switching Characteristic ID3 7.8AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP6N021 series are from Advanced Power innovated design andsilicon process technology to

 8.1. Size:241K  ape
 ap6n023h.pdf pdf_icon

AP6N021M

AP6N023HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 23m Fast Switching Characteristic ID 25.4AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 seriesare from Advanced Power innovated designAP6N023series arefrom Advanced Power innovated

 9.1. Size:178K  ape
 ap6n090k.pdf pdf_icon

AP6N021M

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve

 9.2. Size:171K  ape
 ap6n090g.pdf pdf_icon

AP6N021M

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PTA15N50 | AP2306CGN-HF | AOD504 | SWF6N65K | NP80N04DHE | BUZ78 | NTD32N06LG

 

 
Back to Top

 


 
.