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AP6N021M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AP6N021M

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.5 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3 V

Максимально допустимый постоянный ток стока (Id): 7.8 A

Время нарастания (tr): 6 ns

Выходная емкость (Cd): 100 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.021 Ohm

Тип корпуса: SO8

Аналог (замена) для AP6N021M

 

 

AP6N021M Datasheet (PDF)

1.1. ap6n021m.pdf Size:220K _a-power

AP6N021M
AP6N021M

AP6N021M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge BVDSS 60V D D ▼ Simple Drive Requirement D RDS(ON) 21mΩ D ▼ Fast Switching Characteristic ID3 7.8A G S ▼ RoHS Compliant & Halogen-Free S S SO-8 Description D AP6N021 series are from Advanced Power innovated design and silicon process technology to

4.1. ap6n023h.pdf Size:241K _a-power

AP6N021M
AP6N021M

AP6N023H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement D BVDSS 60V ▼ Lower Gate Charge RDS(ON) 23mΩ ▼ Fast Switching Characteristic ID 25.4A G G ▼ RoHS Compliant & Halogen-Free S S Description G AP4604 seriesare from Advanced Power innovated design AP6N023series arefrom Advanced Power innovated

 5.1. ap6n090y.pdf Size:210K _a-power

AP6N021M
AP6N021M

AP6N090Y Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement S BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 90mΩ D ▼ Fast Switching Characteristic ID3 3.5A G D ▼ RoHS Compliant & Halogen-Free SOT-26 D Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achi

5.2. ap6n090g.pdf Size:171K _a-power

AP6N021M
AP6N021M

AP6N090G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 60V D ▼ Fast Switching Characteristic RDS(ON) 90mΩ ▼ Simple Drive Requirement ID 2.7A S ▼ RoHS Compliant & Halogen-Free D SOT-89 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the

 5.3. ap6n090k.pdf Size:178K _a-power

AP6N021M
AP6N021M

AP6N090K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 90mΩ S ▼ Fast Switching Characteristic ID3 4.1A D ▼ RoHS Compliant & Halogen-Free SOT-223 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve

5.4. ap6n090n.pdf Size:188K _a-power

AP6N021M
AP6N021M

AP6N090N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Small Package Outline RDS(ON) 90mΩ ▼ Surface Mount Device ID 2.5A S ▼ RoHS Compliant & Halogen-Free SOT-23S G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

Другие MOSFET... AP4407GM , AP4423GM , AP4426GM , AP4438CGM , AP4453M , AP4800GEM , AP4P018M , AP6679BGM , BF245A , AP6N090M , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , AP9434GM , AP9467AGM , AP9467GM .

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MOSFET: TMD5N60Z | TMD5N60AZ | TMD5N50G | TMD5N50 | TMD5N40ZG | TMD4N65Z | TMD4N65AZ | TMD4N60AZ | TMD4N60 | TMD3N90 | TMD3N80G | TMD3N50Z | TMD3N50AZ | TMD3N40ZG | TMD2N65AZ |
 


 

 

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