AP6N090M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N090M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP6N090M MOSFET
AP6N090M Datasheet (PDF)
ap6n090k.pdf

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve
ap6n090g.pdf

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the
ap6n090y.pdf

AP6N090YHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60VD Lower Gate Charge RDS(ON) 90mD Fast Switching Characteristic ID3 3.5AGD RoHS Compliant & Halogen-FreeSOT-26 DDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achi
ap6n090n.pdf

AP6N090NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23S GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
Otros transistores... AP4423GM , AP4426GM , AP4438CGM , AP4453M , AP4800GEM , AP4P018M , AP6679BGM , AP6N021M , IRF530 , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , AP9434GM , AP9467AGM , AP9467GM , AP9470GM .
History: WCM2001 | JCS7HN65R | AUIRF7647S2TR1 | 2305 | FQAF90N08 | SMK0825D | SFW031N100C3
History: WCM2001 | JCS7HN65R | AUIRF7647S2TR1 | 2305 | FQAF90N08 | SMK0825D | SFW031N100C3



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