AP6N090M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N090M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 35 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP6N090M MOSFET
- Selecciónⓘ de transistores por parámetros
AP6N090M datasheet
ap6n090k.pdf
AP6N090K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID3 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve
ap6n090g.pdf
AP6N090G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the
ap6n090y.pdf
AP6N090Y Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60V D Lower Gate Charge RDS(ON) 90m D Fast Switching Characteristic ID3 3.5A G D RoHS Compliant & Halogen-Free SOT-26 D Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achi
ap6n090n.pdf
AP6N090N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5A S RoHS Compliant & Halogen-Free SOT-23S G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the lowes
Otros transistores... AP4423GM , AP4426GM , AP4438CGM , AP4453M , AP4800GEM , AP4P018M , AP6679BGM , AP6N021M , IRF1010E , AP6P025M , AP6P090M , AP9408AGM , AP9410AGM , AP9434GM , AP9467AGM , AP9467GM , AP9470GM .
History: STF12N120K5 | CJE3134K | FDBL9406F085
History: STF12N120K5 | CJE3134K | FDBL9406F085
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