AP6P090M Todos los transistores

 

AP6P090M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6P090M
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP6P090M Datasheet (PDF)

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AP6P090M

AP6P090MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID3 -4AG RoHS Compliant & Halogen-FreeSDescriptionDDAP6P090 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t

 7.1. Size:204K  ape
ap6p090h.pdf pdf_icon

AP6P090M

AP6P090HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP6P090 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

 7.2. Size:169K  ape
ap6p090j.pdf pdf_icon

AP6P090M

AP6P090JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP6P090 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

 9.1. Size:181K  ape
ap6p064i.pdf pdf_icon

AP6P090M

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUZ358 | STP33N65M2 | RFL1N10L | STP55N06L | AUIRF2804

 

 
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