AP6P090M Todos los transistores

 

AP6P090M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6P090M

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de AP6P090M MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP6P090M datasheet

 ..1. Size:186K  ape
ap6p090m.pdf pdf_icon

AP6P090M

AP6P090M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID3 -4A G RoHS Compliant & Halogen-Free S Description D D AP6P090 series are from Advanced Power innovated design and silicon D D process technology to achieve t

 7.1. Size:204K  ape
ap6p090h.pdf pdf_icon

AP6P090M

AP6P090H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP6P090 series are from Advanced Power innovated design and G D S silicon process technology to achieve the l

 7.2. Size:169K  ape
ap6p090j.pdf pdf_icon

AP6P090M

AP6P090J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP6P090 series are from Advanced Power innovated design and G D silicon process technology to achieve the low

 9.1. Size:181K  ape
ap6p064i.pdf pdf_icon

AP6P090M

AP6P064I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

Otros transistores... AP4438CGM , AP4453M , AP4800GEM , AP4P018M , AP6679BGM , AP6N021M , AP6N090M , AP6P025M , AON6380 , AP9408AGM , AP9410AGM , AP9434GM , AP9467AGM , AP9467GM , AP9470GM , AP9475GM , AP9479GM .

History: STF12N120K5 | FDBL9406F085 | CJE3134K

 

 

 

 

↑ Back to Top
.