All MOSFET. AP6P090M Datasheet

 

AP6P090M MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP6P090M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SO8

 AP6P090M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6P090M Datasheet (PDF)

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