AP9470GM Todos los transistores

 

AP9470GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9470GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.2 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP9470GM Datasheet (PDF)

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ap9470gm.pdf pdf_icon

AP9470GM

AP9470GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 13.5mD Fast Switching Characteristic ID 10.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9470 series are fro

 0.1. Size:93K  ape
ap9470gm-hf.pdf pdf_icon

AP9470GM

AP9470GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 13.5mD Fast Switching Characteristic ID 10.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

 9.1. Size:94K  ape
ap9475gm-hf.pdf pdf_icon

AP9470GM

AP9475GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VDDD Lower Gate Charge RDS(ON) 40mD Fast Switching Characteristic ID 6.9AGSS RoHS Compliant & Halogen-FreeSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fa

 9.2. Size:217K  ape
ap9476gm.pdf pdf_icon

AP9470GM

AP9476GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VDD Simple Drive Requirement RDS(ON) 21mDD Fast Switching Characteristic ID 7.8AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

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History: KP771A | 2N7121 | AO8803 | FDC3612

 

 
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