AP9470GM. Аналоги и основные параметры
Наименование производителя: AP9470GM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.2 A
Электрические характеристики
tr ⓘ -
Время нарастания: 7.5 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0135 Ohm
Тип корпуса: SO8
Аналог (замена) для AP9470GM
- подборⓘ MOSFET транзистора по параметрам
AP9470GM даташит
..1. Size:166K ape
ap9470gm.pdf 

AP9470GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 13.5m D Fast Switching Characteristic ID 10.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9470 series are fro
0.1. Size:93K ape
ap9470gm-hf.pdf 

AP9470GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D D D Simple Drive Requirement RDS(ON) 13.5m D Fast Switching Characteristic ID 10.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.1. Size:94K ape
ap9475gm-hf.pdf 

AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.2. Size:217K ape
ap9476gm.pdf 

AP9476GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.3. Size:69K ape
ap9477gm.pdf 

AP9477GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 90m D D Fast Switching Characteristic ID 4A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best co
9.4. Size:126K ape
ap9477gk-hf.pdf 

AP9477GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch
9.5. Size:93K ape
ap9474gm-hf.pdf 

AP9474GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D D Single Drive Requirement RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast sw
9.6. Size:98K ape
ap9479gm-hf.pdf 

AP9479GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 45m D D Fast Switching Characteristic ID 5.6A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
9.7. Size:97K ape
ap9477gm-hf.pdf 

AP9477GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 90m D D Fast Switching Characteristic ID 4A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg
9.8. Size:171K ape
ap9479gm.pdf 

AP9479GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS 60V Simple Drive Requirement D D RDS(ON) 45m Lower Gate Charge D D ID 5.6A Fast Switching Characteristic G RoHS Compliant & Halogen-Free S S SO-8 S Description D AP9479 series are fro
9.9. Size:94K ape
ap9476gm-hf.pdf 

AP9476GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement RDS(ON) 21m D D Fast Switching Characteristic ID 7.8A G RoHS Compliant & Halogen-Free S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.10. Size:169K ape
ap9475gm.pdf 

AP9475GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID 6.9A G S S RoHS Compliant & Halogen-Free S SO-8 Description D AP9475 series are from A
9.11. Size:94K ape
ap9478gm.pdf 

AP9478GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D D Lower Gate Charge RDS(ON) 64m D D Fast Switching Characteristic ID 4.8A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin
9.12. Size:92K ape
ap9474gm.pdf 

AP9474GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D D Single Drive Requirement D RDS(ON) 10.5m D Surface Mount Package ID 12.8A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design
9.13. Size:812K cn vbsemi
ap9474gm.pdf 

AP9474GM www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CC
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