AP9563GM Todos los transistores

 

AP9563GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9563GM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SO8

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AP9563GM datasheet

 ..1. Size:178K  ape
 ap9563gm.pdf pdf_icon

AP9563GM

AP9563GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID -6A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9563 series are from Advanced Power innovated design and silicon process technology

 0.1. Size:57K  ape
 ap9563gm-hf.pdf pdf_icon

AP9563GM

AP9563GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D D D Lower Gate Charge RDS(ON) 40m D Fast Switching Characteristic ID -6A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

 7.1. Size:99K  ape
 ap9563gh-hf ap9563gj-hf.pdf pdf_icon

AP9563GM

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

 7.2. Size:235K  ape
 ap9563gh.pdf pdf_icon

AP9563GM

AP9563GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID -26A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, r

MOSTRAR MÁS

Otros transistores... AP9410AGM , AP9434GM , AP9467AGM , AP9467GM , AP9470GM , AP9475GM , AP9479GM , AP9487GM , 4N60 , AP9620AGM , AP9620GM , AP9685GM , AP10A185M , AP10C150M , AP2C018LM , AP2C030LM , AP2P028EM .

History: AP15N03GH | SGSP462 | SI2101 | AP3N4R5M

 

 

 

 

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