AP3A010AM Todos los transistores

 

AP3A010AM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3A010AM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.8 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0104 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET AP3A010AM

 

AP3A010AM Datasheet (PDF)

 ..1. Size:179K  ape
ap3a010am.pdf

AP3A010AM
AP3A010AM

AP3A010AMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2D1 Low On-resistance RDS(ON) 10.4mD1 Fast Switching Performance ID 10.8AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP3A010A series are from Advanced Power innovated designD2D1and silicon

 0.1. Size:140K  ape
ap3a010amt.pdf

AP3A010AM
AP3A010AM

AP3A010AMTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.4m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010A series are from Advanced Power innovateddesign and silicon process technology to achieve th

 7.1. Size:66K  ape
ap3a010mt.pdf

AP3A010AM
AP3A010AM

AP3A010MTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.5m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010 series are from Advanced Power innovateddesign and silicon process technology to achieve the

 9.1. Size:143K  ape
ap3a020y.pdf

AP3A010AM
AP3A010AM

AP3A020YHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2 Low Gate Charge RDS(ON) 20mD1D1G2 Fast Switching Performance ID3 6.5AS2 RoHS Compliant & Halogen-FreeG1S12928-8DescriptionAP3A020 series are from Advanced Power innovated designD2D1and silicon pro

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


AP3A010AM
  AP3A010AM
  AP3A010AM
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top