AP4224LGM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4224LGM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7.1 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SO8

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AP4224LGM datasheet

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 ap4224lgm.pdf pdf_icon

AP4224LGM

AP4224LGM Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 24m D1 Dual N MOSFET Package ID 7.1A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP4224 series are from Advanced Power innovated design and D2 D1 silicon process

 0.1. Size:74K  ape
 ap4224lgm-hf-pre.pdf pdf_icon

AP4224LGM

AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 14m D1 Dual N MOSFET Package ID 10A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of

 8.1. Size:95K  ape
 ap4224gm-hf.pdf pdf_icon

AP4224LGM

AP4224GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 14m D1 Dual N MOSFET Package ID 10A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combinat

 8.2. Size:96K  ape
 ap4224gm.pdf pdf_icon

AP4224LGM

AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 14m D1 D1 Dual N MOSFET Package ID 10A G2 RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast swit

MOSTRAR MÁS

Otros transistores... AP2C030LM, AP2P028EM, AP36016M, AP3700M, AP38028EM, AP3A010AM, AP3B026M, AP3C010M, 2N60, AP4232GM, AP4503AGEM, AP4506GEM, AP4509GM, AP4511GM, AP4513GM, AP4525GEM, AP4532GM