IRFF120 Todos los transistores

 ..1. Size:131K  international rectifier
 2n6788 irff120.pdf

PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30 6.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin

 9.1. Size:131K  international rectifier
 irff130.pdf

PD - 90430C IRFF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796 HEXFET TRANSISTORS JANTXV2N6796 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF130 100V 0.18 8.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin

 9.2. Size:131K  international rectifier
 2n6782 irff110.pdf

PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET TRANSISTORS JANTXV2N6782 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V .60 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

 9.3. Size:99K  international rectifier
 irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf

 9.4. Size:224K  inchange semiconductor
 irff130.pdf

isc N-Channel MOSFET Transistor IRFF130 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A