All MOSFET. IRFF120 Datasheet

 

IRFF120 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFF120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17(max) nC
   trⓘ - Rise Time: 70(max) nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO39

 IRFF120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFF120 Datasheet (PDF)

 ..1. Size:131K  international rectifier
 2n6788 irff120.pdf

IRFF120 IRFF120

PD - 90426CIRFF120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788HEXFETTRANSISTORS JANTXV2N6788THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF120 100V 0.30 6.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

 9.1. Size:131K  international rectifier
 irff130.pdf

IRFF120 IRFF120

PD - 90430CIRFF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796HEXFETTRANSISTORS JANTXV2N6796THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF130 100V 0.18 8.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

 9.2. Size:131K  international rectifier
 2n6782 irff110.pdf

IRFF120 IRFF120

PD - 90423CIRFF110REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782HEXFETTRANSISTORS JANTXV2N6782THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF110 100V .60 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 9.3. Size:99K  international rectifier
 irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf

IRFF120

 9.4. Size:224K  inchange semiconductor
 irff130.pdf

IRFF120 IRFF120

isc N-Channel MOSFET Transistor IRFF130FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

Datasheet: IRFE9110 , IRFE9120 , IRFE9130 , IRFE9210 , IRFE9220 , IRFE9230 , IRFF024 , IRFF110 , IRF9540 , IRFF130 , IRFF210 , IRFF220 , IRFF230 , IRFF310 , IRFF320 , IRFF330 , IRFF420 .

 

 
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