AP4513GM Todos los transistores

 

AP4513GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4513GM
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: SO8

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AP4513GM Datasheet (PDF)

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ap4513gm.pdf

AP4513GM
AP4513GM

AP4513GM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 36mD1D1 Fast Switching Performance ID 5.8AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON)

 0.1. Size:119K  ape
ap4513gm-hf.pdf

AP4513GM
AP4513GM

AP4513GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 36mD1D1 Fast Switching Performance ID 5.8AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON) 68mDescription ID -4.3AThe Advanced Power MOSFETs from A

 7.1. Size:152K  ape
ap4513gh-a.pdf

AP4513GM
AP4513GM

AP4513GH-ARoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.7AS1G1 P-CH BVDSS -35VS2G2RDS(ON) 68mTO-252-4LDescription ID -5.5AThe Advanced Power MOSFETs from APEC provide thedesigner with

 7.2. Size:168K  ape
ap4513gh.pdf

AP4513GM
AP4513GM

AP4513GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10AS1G1P-CH BVDSS -35VS2G2RDS(ON) 75mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best

 7.3. Size:83K  ape
ap4513gd.pdf

AP4513GM
AP4513GM

AP4513GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 35VD2D1 Fast Switching Speed RDS(ON) 36mD1 PDIP-8 Package ID 5.8A RoHS Compliant G2 P-CH BVDSS -35VS2PDIP-8G1RDS(ON) 68mS1Description ID -4.3AThe Advanced Power MOSFETs from APEC provide thedesigner with t

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