AP4513GM Todos los transistores

 

AP4513GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4513GM
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET AP4513GM

 

AP4513GM Datasheet (PDF)

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ap4513gm.pdf pdf_icon

AP4513GM

AP4513GM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35V D2 D2 Low On-resistance RDS(ON) 36m D1 D1 Fast Switching Performance ID 5.8A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35V G1 S1 SO-8 RDS(ON)

 0.1. Size:119K  ape
ap4513gm-hf.pdf pdf_icon

AP4513GM

AP4513GM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35V D2 D2 Low On-resistance RDS(ON) 36m D1 D1 Fast Switching Performance ID 5.8A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35V G1 S1 SO-8 RDS(ON) 68m Description ID -4.3A The Advanced Power MOSFETs from A

 7.1. Size:152K  ape
ap4513gh-a.pdf pdf_icon

AP4513GM

AP4513GH-A RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35V D1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.7A S1 G1 P-CH BVDSS -35V S2 G2 RDS(ON) 68m TO-252-4L Description ID -5.5A The Advanced Power MOSFETs from APEC provide the designer with

 7.2. Size:168K  ape
ap4513gh.pdf pdf_icon

AP4513GM

AP4513GH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35V D1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10A S1 G1 P-CH BVDSS -35V S2 G2 RDS(ON) 75m TO-252-4L Description ID -8A Advanced Power MOSFETs from APEC provide the designer with the best

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