IRFF130 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFF130
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 max nS
Cossⓘ - Capacitancia de salida: 240 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: TO39
Búsqueda de reemplazo de IRFF130 MOSFET
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IRFF130 datasheet
irff130.pdf
PD - 90430C IRFF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796 HEXFET TRANSISTORS JANTXV2N6796 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF130 100V 0.18 8.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin
irff130.pdf
isc N-Channel MOSFET Transistor IRFF130 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
2n6788 irff120.pdf
PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30 6.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin
2n6782 irff110.pdf
PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET TRANSISTORS JANTXV2N6782 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V .60 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing
Otros transistores... IRFE9120, IRFE9130, IRFE9210, IRFE9220, IRFE9230, IRFF024, IRFF110, IRFF120, AON7408, IRFF210, IRFF220, IRFF230, IRFF310, IRFF320, IRFF330, IRFF420, IRFF430
History: AP73T03AGH-HF
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