AP2328GN Todos los transistores

 ..1. Size:176K  ape
 ap2328gn.pdf

AP2328GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 60m Surface Mount Device ID 4A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2328 series are from Advanced Power innovated design and silicon process technology to achieve

 0.1. Size:94K  ape
 ap2328gn-hf.pdf

AP2328GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 60m Surface Mount Device ID 4A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible

 9.1. Size:144K  ape
 ap2326gn.pdf

AP2326GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2326 series are from Advanced Power innovated design and silicon process technology to achieve

 9.2. Size:55K  ape
 ap2321gn-hf.pdf

AP2321GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1A S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low

 9.3. Size:56K  ape
 ap2329gn-hf.pdf

AP2329GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 48m Surface Mount Device ID - 4.3A S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, lo

 9.4. Size:94K  ape
 ap2326gn-hf.pdf

AP2326GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible

 9.5. Size:146K  ape
 ap2320gn.pdf

AP2320GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 9.6. Size:147K  ape
 ap2325gen.pdf

AP2325GEN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,

 9.7. Size:95K  ape
 ap2323gn-hf.pdf

AP2323GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 38m Surface Mount Device ID -5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low

 9.8. Size:181K  ape
 ap2323gn.pdf

AP2323GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 38m Surface Mount Device ID -5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low

 9.9. Size:182K  ape
 ap2322gn.pdf

AP2322GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20V D Small Package Outline RDS(ON) 90m Surface Mount Package ID 2.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resis

 9.10. Size:55K  ape
 ap2320n-hf.pdf

AP2320N-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 9.11. Size:147K  ape
 ap2321gn.pdf

AP2321GN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40V D Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1A S RoHS Compliant & Halogen-Free SOT-23S G Description D AP2321 series are from Advanced Power innovated design and silicon process technology to achieve the low

 9.12. Size:90K  ape
 ap2322gn-hf.pdf

AP2322GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V gate drive BVDSS 20V D Simple Drive Requirement RDS(ON) 90m Surface mount package ID 2.5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible

 9.13. Size:93K  ape
 ap2325geu6-hf.pdf

AP2325GEU6-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 145m G Surface Mount Device ID -1.8A D D SOT-363 RoHS Compliant & Halogen-Free D Description AP2325 series are from Advanced Power innovated design and G silicon process technology

 9.14. Size:54K  ape
 ap2320gn-hf.pdf

AP2320GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist

 9.15. Size:94K  ape
 ap2324gn-hf.pdf

AP2324GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V D Lower Gate Charge RDS(ON) 25m Surface mount package ID 6A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistanc

 9.16. Size:59K  ape
 ap2325gen-hf.pdf

AP2325GEN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,

 9.17. Size:55K  ape
 ap2327gn-hf.pdf

AP2327GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 37m Surface Mount Device ID - 5.1A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provid

 9.18. Size:179K  ape
 ap2323agn.pdf

AP2323AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 38m Surface Mount Device ID -5A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2323A series are from Advanced Power innovated design and silicon process technology to achieve the

 9.19. Size:1302K  kexin
 ap2322gn-3.pdf

SMD Type MOSFET N-Channel MOSFET AP2322GN (KP2322GN) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 2.5 A 1 2 RDS(ON) 90m (VGS = 4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V) 1. Gate 2. Source 3. Drain D G S Absolute Maximum Rating

 9.20. Size:1154K  kexin
 ap2322gn.pdf

SMD Type MOSFET N-Channel MOSFET AP2322GN (KP2322GN) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 2.5 A 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 90m (VGS = 4.5V) 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V) 1. Gate 2. Source 3. Drain D G S Absolute Maximum Ratings Ta

 9.21. Size:847K  cn vbsemi
 ap2321gn.pdf

AP2321GN www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

 9.22. Size:1420K  cn apm
 ap2320mi.pdf

AP2320MI 20V N-Channel Enhancement Mode MOSFET Description The AP2320MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =8A DS D R