AP2328GN MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2328GN
Marking Code: NZSS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
AP2328GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2328GN Datasheet (PDF)
ap2328gn.pdf
AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2328 series are from Advanced Power innovated design andsilicon process technology to achieve
ap2328gn-hf.pdf
AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible
ap2326gn.pdf
AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2326 series are from Advanced Power innovated design andsilicon process technology to achieve
ap2321gn-hf.pdf
AP2321GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low
ap2329gn-hf.pdf
AP2329GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 48m Surface Mount Device ID - 4.3AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, lo
ap2326gn-hf.pdf
AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible
ap2320gn.pdf
AP2320GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap2325gen.pdf
AP2325GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,
ap2323gn-hf.pdf
AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low
ap2323gn.pdf
AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low
ap2322gn.pdf
AP2322GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Small Package Outline RDS(ON) 90m Surface Mount Package ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resis
ap2320n-hf.pdf
AP2320N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap2321gn.pdf
AP2321GNHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23SGDescription DAP2321 series are from Advanced Power innovated design and siliconprocess technology to achieve the low
ap2322gn-hf.pdf
AP2322GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V gate drive BVDSS 20VD Simple Drive Requirement RDS(ON) 90m Surface mount package ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible
ap2325geu6-hf.pdf
AP2325GEU6-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -20VDD Small Package Outline RDS(ON) 145mG Surface Mount Device ID -1.8ADDSOT-363 RoHS Compliant & Halogen-FreeDDescriptionAP2325 series are from Advanced Power innovated design andGsilicon process technology
ap2320gn-hf.pdf
AP2320GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resist
ap2324gn-hf.pdf
AP2324GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 25m Surface mount package ID 6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistanc
ap2325gen-hf.pdf
AP2325GEN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,
ap2327gn-hf.pdf
AP2327GN-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 37m Surface Mount Device ID - 5.1AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provid
ap2323agn.pdf
AP2323AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAP2323A series are from Advanced Power innovated design andsilicon process technology to achieve the
ap2322gn-3.pdf
SMD Type MOSFETN-Channel MOSFETAP2322GN (KP2322GN)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 2.5 A1 2 RDS(ON) 90m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V)1. Gate2. Source3. DrainDGS Absolute Maximum Rating
ap2322gn.pdf
SMD Type MOSFETN-Channel MOSFETAP2322GN (KP2322GN)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 2.5 A1 2+0.1+0.050.95 -0.1 RDS(ON) 90m (VGS = 4.5V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V)1. Gate2. Source3. DrainDGS Absolute Maximum Ratings Ta
ap2321gn.pdf
AP2321GNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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