AP60PN72REN Todos los transistores

 

AP60PN72REN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60PN72REN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.053 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 72 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de AP60PN72REN MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP60PN72REN Datasheet (PDF)

 ..1. Size:143K  ape
 ap60pn72ren.pdf pdf_icon

AP60PN72REN

AP60PN72RENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to ac

 5.1. Size:144K  ape
 ap60pn72rlen.pdf pdf_icon

AP60PN72REN

AP60PN72RLENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to a

 9.1. Size:1072K  1
 ap60p20q.pdf pdf_icon

AP60PN72REN

AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R

 9.2. Size:623K  ncepower
 nceap60p90ak.pdf pdf_icon

AP60PN72REN

NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and

MOSTRAR MÁS

Otros transistores... AP2323GN , AP2326GN , AP2328GN , AP2330GN , AP2338GN , AP2344GN , AP2346GN , AP5600N , IRF9540 , AP60PN72RLEN , AP15TN1R5N , AP2309GEN , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN , AP2N075EN .

History: WMK12N80M3 | 2SK845 | AOL1428A | AOK125A60 | WMK037N10HGS | EM8810 | SSF1320N

 

 
Back to Top

 


 
.