AP60PN72RLEN Todos los transistores

 

AP60PN72RLEN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60PN72RLEN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.053 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 72 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

AP60PN72RLEN Datasheet (PDF)

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 ap60pn72rlen.pdf pdf_icon

AP60PN72RLEN

AP60PN72RLENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to a

 5.1. Size:143K  ape
 ap60pn72ren.pdf pdf_icon

AP60PN72RLEN

AP60PN72RENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to ac

 9.1. Size:1072K  1
 ap60p20q.pdf pdf_icon

AP60PN72RLEN

AP60P20Q P-Channel Enhancement Mosfet Feature -20V,-60A R

 9.2. Size:623K  ncepower
 nceap60p90ak.pdf pdf_icon

AP60PN72RLEN

NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and

MOSTRAR MÁS

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History: SGP100N025 | BSR202N | FHU50N06D

 

 
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