AP60PN72RLEN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP60PN72RLEN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.053 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 9 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 72 Ohm
Paquete / Cubierta: SOT23
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AP60PN72RLEN Datasheet (PDF)
ap60pn72rlen.pdf

AP60PN72RLENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to a
ap60pn72ren.pdf

AP60PN72RENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to ac
nceap60p90ak.pdf

NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and
Otros transistores... AP2326GN , AP2328GN , AP2330GN , AP2338GN , AP2344GN , AP2346GN , AP5600N , AP60PN72REN , K3569 , AP15TN1R5N , AP2309GEN , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN , AP2N075EN , AP2P052N .
History: VN2410LS
History: VN2410LS



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