AP60PN72RLEN Datasheet and Replacement
Type Designator: AP60PN72RLEN
Marking Code: A16SS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
|Id|ⓘ - Maximum Drain Current: 0.053 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.3 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 72 Ohm
Package: SOT23
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AP60PN72RLEN Datasheet (PDF)
ap60pn72rlen.pdf

AP60PN72RLENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to a
ap60pn72ren.pdf

AP60PN72RENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600VD Small Package Outline RDS(ON) 72 ESD Diode Protected ID 53mAS RoHS Compliant & Halogen-Free HBM ESD 2KVSOT-23 GDescriptionDAP60PN72 series are from Advanced Power innovated design and siliconprocess technology to ac
nceap60p90ak.pdf

NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CEP13N10L | AP4N1R1CDT-A | 5N60A
Keywords - AP60PN72RLEN MOSFET datasheet
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History: CEP13N10L | AP4N1R1CDT-A | 5N60A



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