AP15TN1R5N Todos los transistores

 ..1. Size:188K  ape
 ap15tn1r5n.pdf

AP15TN1R5N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 150V D Fast Switching Characteristic RDS(ON) 1.5 Low Gate Charge ID 0.6A S RoHS Compliant & Halogen-Free SOT-23S G Description D AP15TN1R5 series are from Advanced Power innovated design and silicon process technology to achieve

 9.1. Size:213K  ape
 ap15tp1r0y.pdf

AP15TP1R0Y Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic S BVDSS -150V D Lower Gate Charge D RDS(ON) 1 Small Footprint & Low Profile Package ID3 -1A G D RoHS Compliant & Halogen-Free D SOT-26 D Description AP15TP1R0 series are from Advanced Power innovated design and silicon process t

 9.2. Size:166K  ape
 ap15t15gm.pdf

AP15T15GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150V D D D Simple Drive Requirement RDS(ON) 150m D Surface Mount Package ID 2.6A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP15T15 series are from Advanc

 9.3. Size:94K  ape
 ap15t15gh-hf.pdf

AP15T15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 150m Fast Switching Characteristic ID 11.2A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast

 9.4. Size:93K  ape
 ap15t15gm-hf.pdf

AP15T15GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 150V D D D Simple Drive Requirement RDS(ON) 150m D Surface Mount Package ID 2.6A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast sw

 9.5. Size:57K  ape
 ap15t20gh-hf.pdf

AP15T20GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fas

 9.6. Size:102K  ape
 ap15t03gj.pdf

AP15T03GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 12A G S Description G The TO-252 package is universally preferred for all commercial- D S TO-252(H) industrial

 9.7. Size:57K  ape
 ap15t20gs-hf.pdf

AP15T20GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 9.8. Size:59K  ape
 ap15t20gi-hf.pdf

AP15T20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-Free G S Description AP15T20 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 9.9. Size:233K  ape
 ap15t15gh.pdf

AP15T15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 150m Fast Switching Characteristic ID 11.2A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with G D S the best combination of fast

 9.10. Size:186K  ape
 ap15tp1r0m.pdf

AP15TP1R0M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -150V D D D Lower Gate Charge RDS(ON) 1 D Fast Switching Characteristic ID -1.1A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP15TP1R0 series are from Advanced Power innovated design and silicon process technol

 9.11. Size:159K  ape
 ap15tp1r0yt.pdf

AP15TP1R0YT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -150V Small Size & Lower Profile RDS(ON) 1 RoHS Compliant & Halogen-Free ID3 -1.2A G S D D Description D AP15TP1R0 series are from Advanced Power innovated design and D silicon process technology to achieve the lowest possible on

 9.12. Size:58K  ape
 ap15t25h-hf.pdf

AP15T25H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 250V D Lower Gate Charge RDS(ON) 320m Fast Switching Characteristics ID 8.7A RoHS Compliant & Halogen-Free G S Description G AP15T25 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

 9.13. Size:116K  ape
 ap15t20agh-hf.pdf

AP15T20AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 250m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fa

 9.14. Size:94K  ape
 ap15t15gi-hf.pdf

AP15T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 150V D Lower Gate Charge RDS(ON) 150m Fast Switching Characteristics ID 10A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rug

 9.15. Size:402K  ncepower
 nceap15t14.pdf

http //www.ncepower.com NCEAP15T14 NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R

 9.16. Size:695K  ncepower
 nceap15t14d.pdf

http //www.ncepower.com NCEAP15T14D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x