AP2325GEN Todos los transistores

 

AP2325GEN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2325GEN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SOT23S

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AP2325GEN datasheet

 ..1. Size:147K  ape
ap2325gen.pdf pdf_icon

AP2325GEN

AP2325GEN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,

 0.1. Size:59K  ape
ap2325gen-hf.pdf pdf_icon

AP2325GEN

AP2325GEN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,

 6.1. Size:93K  ape
ap2325geu6-hf.pdf pdf_icon

AP2325GEN

AP2325GEU6-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 145m G Surface Mount Device ID -1.8A D D SOT-363 RoHS Compliant & Halogen-Free D Description AP2325 series are from Advanced Power innovated design and G silicon process technology

 9.1. Size:94K  ape
ap2328gn-hf.pdf pdf_icon

AP2325GEN

AP2328GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 60m Surface Mount Device ID 4A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible

Otros transistores... AP2344GN , AP2346GN , AP5600N , AP60PN72REN , AP60PN72RLEN , AP15TN1R5N , AP2309GEN , AP2321GN , 2N7002 , AP2N025LN , AP2N030EN , AP2N075EN , AP2P052N , AP2P053N , AP3601N , AP3N028EN , AP3N035N .

 

 

 

 

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