AP2P053N Todos los transistores

 

AP2P053N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2P053N
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
   Paquete / Cubierta: SOT23S
 

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AP2P053N Datasheet (PDF)

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AP2P053N

AP2P053NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P053 series are from Advanced Power innovated designand silicon process technology to achieve th

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AP2P053N

AP2P052NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2P052 series are from Advanced Power innovated designand silicon process technology to achieve the

 8.2. Size:176K  ape
 ap2p052y.pdf pdf_icon

AP2P053N

AP2P052YHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 52mD Surface Mount Device ID -5.1AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2P052 series are from Advanced Power innovated design and siliconprocess technology to ach

 9.1. Size:186K  ape
 ap2p028em.pdf pdf_icon

AP2P053N

AP2P028EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VDDD ESD Diode Protected RDS(ON) 28mD Suit for USB Type-C Application ID -7AGS RoHS Compliant & Halogen-Free HBM ESD 8KVSSSO-8DescriptionDAP2P028E series are from Advanced Power innovated designand silicon

MOSTRAR MÁS

Otros transistores... AP15TN1R5N , AP2309GEN , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN , AP2N075EN , AP2P052N , SPP20N60C3 , AP3601N , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , AP6N090N , AP6P250N .

History: NVMFS6B14NL | SUU10P10-195

 

 
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