AP3N028EN Todos los transistores

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 ap3n028en.pdf

AP3N028EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 28m Fast Switching Performance ID 5.4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP3N028E series are from Advanced Power innovated design and silicon G process technology to achieve

 6.1. Size:71K  ape
 ap3n028ey.pdf

AP3N028EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS 30V D Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7A G D RoHS Compliant & Halogen-Free D SOT-26 D Description AP3N028E series are from Advanced Power innovated design and silicon G process technology to ach

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 ap3n020p.pdf

AP3N020P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare fromAdvanced Power innovated design AP3N020series arefrom Advanced Power innovated de

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 ap3n035n.pdf

AP3N035N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 4.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP3N035 series are from Advanced Power innovated design and silicon process technology to achieve the

 9.2. Size:120K  ape
 ap3n018eyt.pdf

AP3N018EYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.3A G S D D Description D D AP3N018E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-re

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 ap3n045en.pdf

AP3N045EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 45m Fast Switching Performance ID 4.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP3N045 series are from Advanced Power innovated design and silicon G process technology to achieve t

 9.4. Size:1479K  cn apm
 ap3n06mi.pdf

AP3N06MI 60V N-Channel Enhancement Mode MOSFET Description The AP3N06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS D R

 9.5. Size:1829K  cn apm
 ap3n06i.pdf

AP3N06I 60V N-Channel Enhancement Mode MOSFET Description The AP3N06I uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS D R