Справочник MOSFET. AP3N028EN

 

AP3N028EN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP3N028EN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SOT23S

 Аналог (замена) для AP3N028EN

 

 

AP3N028EN Datasheet (PDF)

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 ap3n028en.pdf

AP3N028EN AP3N028EN

AP3N028ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 28m Fast Switching Performance ID 5.4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to achieve

 6.1. Size:71K  ape
 ap3n028ey.pdf

AP3N028EN AP3N028EN

AP3N028EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS 30VD Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to ach

 8.1. Size:202K  ape
 ap3n020p.pdf

AP3N028EN AP3N028EN

AP3N020PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP3N020series arefrom Advanced Power innovated de

 9.1. Size:151K  ape
 ap3n035n.pdf

AP3N028EN AP3N028EN

AP3N035NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 4.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N035 series are from Advanced Power innovated design and siliconprocess technology to achieve the

 9.2. Size:120K  ape
 ap3n018eyt.pdf

AP3N028EN AP3N028EN

AP3N018EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.3AGS DDDescriptionDDAP3N018E series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-re

 9.3. Size:149K  ape
 ap3n045en.pdf

AP3N028EN AP3N028EN

AP3N045ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 45m Fast Switching Performance ID 4.3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N045 series are from Advanced Power innovated design and siliconGprocess technology to achieve t

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History: SSF3615

 

 
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