AP3N028EN Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3N028EN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 95 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: SOT23S
- подбор MOSFET транзистора по параметрам
AP3N028EN Datasheet (PDF)
ap3n028en.pdf

AP3N028ENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 28m Fast Switching Performance ID 5.4AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to achieve
ap3n028ey.pdf

AP3N028EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS 30VD Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to ach
ap3n020p.pdf

AP3N020PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP3N020series arefrom Advanced Power innovated de
ap3n035n.pdf

AP3N035NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 4.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N035 series are from Advanced Power innovated design and siliconprocess technology to achieve the
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SQJ474EP | STP80NE03L-06
History: SQJ474EP | STP80NE03L-06



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