AP3P090N Todos los transistores

 ..1. Size:154K  ape
 ap3p090n.pdf

AP3P090N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 90m Surface Mount Device ID3 -3.1A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP3P090 series are from Advanced Power innovated design and silicon process technology to achieve the

 9.1. Size:191K  ape
 ap3p080n.pdf

AP3P080N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -30V D Small Package Outline RDS(ON) 80m Surface Mount Device ID -3.2A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP3P080 series are from Advanced Power innovated design and silicon process technology to achieve the

 9.2. Size:206K  ape
 ap3p050h.pdf

AP3P050H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m G Fast Switching Characteristic ID -15A RoHS Compliant & Halogen-Free S Description AP3P050 series are from Advanced Power innovated design and G D S silicon process technology to achieve the l

 9.3. Size:137K  ape
 ap3p010yt.pdf

AP3P010YT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching,

 9.4. Size:162K  ape
 ap3p010amt.pdf

AP3P010AMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free G S D Description D D AP3P010A series are from Advanced Power innovated design and D silicon process technology to achiev

 9.5. Size:67K  ape
 ap3p010h.pdf

AP3P010H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A G RoHS Compliant & Halogen-Free S Description G AP3P010 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes

 9.6. Size:65K  ape
 ap3p028lm.pdf

AP3P028LM Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 28m Capable of 2.5V Gate Drive ID3 -7.7A G RoHS Compliant & Halogen-Free S Description D D AP3P028L series are from Advanced Power innovated design and D D silicon process technology to achiev

 9.7. Size:186K  ape
 ap3p050m.pdf

AP3P050M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 50m G Simple Drive Requirement ID3 -5.6A RoHS Compliant & Halogen-Free S Description D D AP3P050 series are from Advanced Power innovated design and silicon D D process technology to achieve t

 9.8. Size:186K  ape
 ap3p010m.pdf

AP3P010M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3A G RoHS Compliant & Halogen-Free S Description D D AP3P010 series are from Advanced Power innovated design and silicon D D process technology to achieve t

 9.9. Size:1382K  cn apm
 ap3p06li.pdf

AP3P06LI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS D R

 9.10. Size:1298K  cn apm
 ap3p06bi.pdf

AP3P06BI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-2.8A DS D R

 9.11. Size:1865K  cn apm
 ap3p06mi.pdf

AP3P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS D R

 9.12. Size:2081K  cn apm
 ap3p06ai.pdf

AP3P06AI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-3 A RDS(ON)