AP3P090N Todos los transistores

 

AP3P090N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P090N
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT23S
 

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AP3P090N Datasheet (PDF)

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AP3P090N

AP3P090NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 90m Surface Mount Device ID3 -3.1AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3P090 series are from Advanced Power innovated designand silicon process technology to achieve the

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 ap3p080n.pdf pdf_icon

AP3P090N

AP3P080NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -30VD Small Package Outline RDS(ON) 80m Surface Mount Device ID -3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3P080 series are from Advanced Power innovated designand silicon process technology to achieve the

 9.2. Size:206K  ape
 ap3p050h.pdf pdf_icon

AP3P090N

AP3P050HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50mG Fast Switching Characteristic ID -15A RoHS Compliant & Halogen-FreeSDescriptionAP3P050 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

 9.3. Size:137K  ape
 ap3p010yt.pdf pdf_icon

AP3P090N

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP2N075EN , AP2P052N , AP2P053N , AP3601N , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , TK10A60D , AP6N090N , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN .

History: AM7490N | NCE65T180 | ME95N03T | AO4800 | GM2302 | AON7518 | IPB77N06S2-12

 

 
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