AP6N090N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6N090N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: SOT23S
Búsqueda de reemplazo de AP6N090N MOSFET
AP6N090N Datasheet (PDF)
ap6n090n.pdf

AP6N090NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23S GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
ap6n090k.pdf

AP6N090KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID3 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve
ap6n090g.pdf

AP6N090GHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AS RoHS Compliant & Halogen-FreeDSOT-89GDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achieve the
ap6n090y.pdf

AP6N090YHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60VD Lower Gate Charge RDS(ON) 90mD Fast Switching Characteristic ID3 3.5AGD RoHS Compliant & Halogen-FreeSOT-26 DDescription DAP6N090 series are from Advanced Power innovated design andsilicon process technology to achi
Otros transistores... AP2P052N , AP2P053N , AP3601N , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , RFP50N06 , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN .
History: WFF18N50 | CSD17578Q3A | STN1NK80Z | IRFS832 | ZXMP6A13F | MMN6680 | ELM16400EA
History: WFF18N50 | CSD17578Q3A | STN1NK80Z | IRFS832 | ZXMP6A13F | MMN6680 | ELM16400EA



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
bu4508dx | 2sc1364 | 2sc2320 | d669a transistor | 2sc1419 | 2sc1124 | 2n408 | 2sc2690