AP2314GN Todos los transistores

 

AP2314GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2314GN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SOT23S
 

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AP2314GN Datasheet (PDF)

 ..1. Size:146K  ape
ap2314gn.pdf pdf_icon

AP2314GN

AP2314GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower On-resistance RDS(ON) 75m Surface Mount Package ID 3.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching,low on

 0.1. Size:95K  ape
ap2314gn-hf.pdf pdf_icon

AP2314GN

AP2314GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 75mD Surface mount package ID 3.5A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resista

 9.1. Size:56K  ape
ap2310gg-hf.pdf pdf_icon

AP2314GN

AP2310GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Srug

 9.2. Size:99K  ape
ap2319gn-hf.pdf pdf_icon

AP2314GN

AP2319GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 90mD Surface Mount Device ID -3.1A RoHS Compliant & Halogen-FreeSSOT-23 GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,l

Otros transistores... AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , AP6N090N , AP6P250N , AP2301EN , IRF530 , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY .

History: P0460AS | MTMC8E2A0LBF | AM7304N | NCEP6060GU | STP110N8F6 | UTT40P04 | SPP15N65C3

 

 
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