AP6N2K0EN Todos los transistores

 

AP6N2K0EN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6N2K0EN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: SOT23S

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AP6N2K0EN datasheet

 ..1. Size:141K  ape
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AP6N2K0EN

AP6N2K0EN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 2 Surface Mount Device ID3 450mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP6N2K0E series are from Advanced Power innovated design and silicon G process technology to achieve th

 9.1. Size:220K  ape
ap6n2r0i.pdf pdf_icon

AP6N2K0EN

AP6N2R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID 110A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N2R0 seriesare fromAdvanced Power innovated d

 9.2. Size:137K  ape
ap6n2r0cdt.pdf pdf_icon

AP6N2K0EN

AP6N2R0CDT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D 100% Rg & UIS Test RDS(ON) 2m Ultra Low On-resistance ID4 205A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP6N2R0C series are from Advanced Power innovated design and silicon process technology to achiev

 9.3. Size:209K  ape
ap6n2r0p.pdf pdf_icon

AP6N2K0EN

AP6N2R0P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 2m Fast Switching Characteristic ID3 255A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N2R0 seriesare fromAdvanced Power innovated de

Otros transistores... AP3P080N , AP3P090N , AP6N090N , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , IRF530 , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y .

History: STF12N120K5

 

 

 


History: STF12N120K5

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