AP2318BEN Todos los transistores

 

AP2318BEN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2318BEN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.53 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: SOT23S
 

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AP2318BEN Datasheet (PDF)

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 ap2318ben.pdf pdf_icon

AP2318BEN

AP2318BENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318B series are from Advanced Power innovated design and siliconGprocess technology to achiev

 8.1. Size:59K  ape
 ap2318agen-hf.pdf pdf_icon

AP2318BEN

AP2318AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mAS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible on

 8.2. Size:97K  ape
 ap2318gen-hf.pdf pdf_icon

AP2318BEN

AP2318GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS CompliantSOT-23 GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extrem

 8.3. Size:148K  ape
 ap2318gen.pdf pdf_icon

AP2318BEN

AP2318GENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318 series are from Advanced Power innovated design and siliconGprocess technology to achieve t

MOSTRAR MÁS

Otros transistores... AP6N090N , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , IRFP450 , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , AP6N090Y .

History: APT22F100J | NTTFS005N04C | NCE0224D

 

 
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