AP2318BEN Todos los transistores

 

AP2318BEN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2318BEN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.53 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 13 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: SOT23S

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AP2318BEN datasheet

 ..1. Size:149K  ape
ap2318ben.pdf pdf_icon

AP2318BEN

AP2318BEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30V D Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318B series are from Advanced Power innovated design and silicon G process technology to achiev

 8.1. Size:59K  ape
ap2318agen-hf.pdf pdf_icon

AP2318BEN

AP2318AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mA S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on

 8.2. Size:97K  ape
ap2318gen-hf.pdf pdf_icon

AP2318BEN

AP2318GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extrem

 8.3. Size:148K  ape
ap2318gen.pdf pdf_icon

AP2318BEN

AP2318GEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318 series are from Advanced Power innovated design and silicon G process technology to achieve t

Otros transistores... AP6N090N , AP6P250N , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , NCEP15T14 , AP15TP1R0Y , AP2604GY , AP2615GEY , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , AP6N090Y .

History: AP6905GH-HF | AP9970GK | AP5322GM | AP2N1K2EN1 | AP6985GN2-HF | CJK3400AH | AP6900GH-HF

 

 

 

 

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