AP2615GEY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2615GEY
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Encapsulados: SOT26
Búsqueda de reemplazo de AP2615GEY MOSFET
- Selecciónⓘ de transistores por parámetros
AP2615GEY datasheet
ap2615gey.pdf
AP2615GEY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -30V D Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0A G D D RoHS Compliant & Halogen-Free SOT-26 D Description AP2615 series are from Advanced Power innovated design and silicon G process technology to
ap2615gy-hf.pdf
AP2615GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5A G RoHS Compliant & Halogen-Free S S D Description D AP2615 series are from Advanced Power innovated design and silicon G process technology
ap2611gyt-hf.pdf
AP2611GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device d
ap2612gy-hf.pdf
AP2612GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS 30V D D Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6A G D RoHS Compliant D SOT-26 Description Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistanc
Otros transistores... AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , IRFP450 , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY .
History: AP15N03GH | AP85T10GR-HF
History: AP15N03GH | AP85T10GR-HF
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