AP2615GEY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2615GEY
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: SOT26
Búsqueda de reemplazo de AP2615GEY MOSFET
AP2615GEY Datasheet (PDF)
ap2615gey.pdf

AP2615GEY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -30VD Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0AGDD RoHS Compliant & Halogen-FreeSOT-26DDescriptionAP2615 series are from Advanced Power innovated design and siliconGprocess technology to
ap2615gy-hf.pdf

AP2615GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2615 series are from Advanced Power innovated design and siliconGprocess technology
ap2611gyt-hf.pdf

AP2611GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d
ap2612gy-hf.pdf

AP2612GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS 30VDD Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6AGD RoHS CompliantDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the lowest possible on-resistanc
Otros transistores... AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y , AP2604GY , IRF1407 , AP2617GY , AP2N030EY , AP2P052Y , AP3N028EY , AP6N090Y , AP2906EY , AP2626GY , AP2530GY .
History: IRFS9143 | SE30200 | STP10NK80ZFP | AON6278 | TW1527SI | IRFPC42 | JCS740RC
History: IRFS9143 | SE30200 | STP10NK80ZFP | AON6278 | TW1527SI | IRFPC42 | JCS740RC



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